Consider the junction diode as ideal. The value of current flowing through $AB$ is

$A$ crystal diode is a:

$A$ $P-N$ junction has a potential barrier of $0.5 \ V$. If the depletion region is $5 \times 10^{-7} \ m$ wide,what will be the intensity of the electric field in this region?

The $\text{I-V}$ characteristic of a $\text{P-N}$ junction in forward bias is shown. The approximate forward resistance of the junction is $-$ (in $\Omega$)

Which of the following circuits is in forward bias?

In the given figure,a diode $D$ is connected to an external resistance $R = 100 \,\Omega$ and an $e.m.f.$ of $3.5 \,V$. If the barrier potential developed across the diode is $0.5 \,V$,the current in the circuit will be ........ $mA$.